通过深紫外光刻和感应耦合等离子刻蚀设备，制备了所设计的器件。
The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
利用并行直写技术与感应耦合等离子刻蚀技术制作了部分二元光学元件。
Some binary optical elements were manufactured by parallel direct writing and inductive couple plasma etching technology.
然后在氧等离子体中用电子束刻蚀法去除沟道区石墨烯形成晶体管的沟道。
They then defined the transistor channel using electron-beam lithography, removing graphene outside of channel regions with an oxygen plasma.
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