这些陷阱可能是在不同生长条件的介质膜淀积过程中等离子体引进的有关辐照损伤。
The origin of these traps might be due to irradiation damage induced by plasma during insulating layer growth process.
另外，等离子体轰击在薄膜的近表面引入了电荷陷阱，使俘获的驻极化电荷能较稳定地保存。
In addition, the plasma bombardment induces the charge traps into the near-surface, which make the trapped charge stored stably.
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