从固体的表面张力出发，求得空位的形成能。
The formation energy of vacancy is calculated from, the surface tension of solid.
化合物中氧空位的形成有利于阴极的电子发射，氧缺位增强了镧氧化合物的半导体性。
The formation of oxygen vacancies enhances semiconductor property of La-O compound and improves greatly the performance of cathodes.
而不同的石墨烯面之间存在的表面能可以通过在晶界处形成空位或者位错环而得到降低。
The interface energy that exists between the sheets could be minimized by the grain boundaries by the formation of dislocations or pairs of rings.
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