管芯研究结果表明，在适当的退火条件下，离子注入掺杂制备浅结是改善器件特性较为理想的方法。
Test results show that the preparation of shallow junctions by ion implantation with proper annealing is an ideal technique for improvement in the device performances.
本文对多晶硅膜离子注入掺杂和扩散掺杂制备浅发射结进行了实验研究。
An experimental study has been carried out on the doping of polysilicon by ion implantation and diffusion for the preparation of shallow junctions.
计算机软件模拟被用来分析抗穿通离子注入中离子束精度偏差对半导体器件（低至36纳米结器件）的影响。
The Computer Software Simulation is used to analyse the effect of punchtrhough stop implantation precision on the performance of MOSFET device (low to the 36nm junction device).
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