另外，当有源硅区之间的隔离必须充当一离子注入步骤的一自行对准阻挡层时，所述多晶硅瓦片本身增加所述隔离的厚度。

In addition, the poly tiles themselves increase the thickness of the isolation between active silicon regions when it must serve as a self-aligned blocking layer for an ion implantation step.

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公开了一种CMOS图像传感器及其制造方法，其中在活性区与场效应区之间的边界未被离子注入损坏。

A CMOS image sensor and a method for fabricating the same are disclosed, in which the boundary between an active region and a field region is not damaged by ion implantation.

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