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本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。
This paper reviews the research progress in both theoretical and experimental aspects of band-to-band optical absorption transition effect in narrow gap semiconductor HgCdTe.
光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。
Optical transition effect is a fundamental physical process in the narrow gap semiconductor infrared detectors.
文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展。
This paper reviews the research on this effect in narrow gap semiconductors for infrared photo-electronic detectors.
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