本研究还得到了能有效阻挡铜硅接触的钽膜的淀积速率。
The deposit rate of the ta film for efficiently obstructing the contact of si and Cu was also got.
通过分离含氯和硅的聚合物表明标记的氯在接触后的硅样品表面被探测到了。
Using separate pieces of fluorine- and silicon-containing polymers allowed the authors to show that signals consistent with the presence of fluorine were detected in the silicon sample after contact.
它由两层半导体晶硅材料合在一起夹在金属接触器之间。
It is composed of two layers of semiconductor material, typically silicon, that are sandwiched together between metal contacts.
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