因此在硅基底上形成金属硅化物薄膜也被广泛应用于半导体工业。
The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry.
一种微波氢等离子体制备金属硅化物薄膜的方法，用于薄膜制备领域。
The invention is a preparation method of metal silicide film by microwave hydrogen plasma, relates to film preparation field.
特别是，当难熔金属硅化物薄膜是硅化物薄膜的钨，铜的浓度最好，它在0.1至1.0范围为野生。%。
In particular, when the refractory metal silicide film is a tungsten silicide film, the concentration of cu is preferable that it is in the range of 0.1 to 1.0 wt. %.
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