根据扫描所得的电容-时间瞬态曲线，可确定样品中少于产生寿命。
From the Ct transient curve obtained experimentally, the minority carrier generation lifetime in semiconductor can be determined.
通过加速寿命试验促使电火工品老化，利用瞬态脉冲试验，得到电火工品的温升曲线，点火压力的变化及50%发火点。
By means of speeding up the aging of the EIP and transient pulse test, the temperature-rising curve of EIP, the variation of the ignition pressure and 50% ignition point are obtained.
在将表面产生速度看作常数的条件下，本文导出了MOS结构对阶跃电压瞬态响应曲线的解析表达式。
In this paper an analytical expression of the ct transient response curve of a MOS structure has been derived under the condition that the surface generation rate can be regarded a constant.
应用推荐