进一步证明了温度作用下，硬磁畴畴壁中的VBL是逐步解体的。
This proves VBL in hard domains wall breakdown gradually affected by temperature.
硬磁畴畴壁中垂直布洛赫线的形成及其稳定性的研究，对布洛赫线存储器（BLM）的研制与使用具有重要意义。
The formation and stability of VBLs in the hard domains is very important to design and use ofBLM.
并在此基础上提出了动态跃迁频率作为微畴-宏畴转变稳定性的新判据。
A new stable ruler of jump frequency was raised during micro domain macrodomain transition.
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