论述了提取混合信号集成电路衬底电路模型的格林函数法。
The Green function method used for the extraction of the substrate model in mixed-signal integrated circuits is discussed in this paper.
方形光二极管阵列包括四个集成在通用磷化铟（InP）衬底上的光二极管单片集成电路，采用低制造、集成与测试率的铟镓砷化物/磷化铟半导体工艺制造。
The Quad PD Arrays consist of four photodiodes monolithically integrated on a common indium phosphide (InP) substrate, and are fabricated using a low FIT rate InGaAs/InP semiconductor process.
本文在分析MOSFET衬底电流原理的基础上，提出了一种新型抗热载流子退化效应的CMOS数字电路结构。
Based on analysis of the principle of substrate current of MOSFETs, a new hot carriers resistant structure of CMOS digital circuits is proposed.
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