本文介绍一种N级适应式可逆环形电路的原理和设计方法。

This paper presents details of the electric principle and method of design of an N-stage adaptive reversible ring circuit.

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研究表明，单电子环形存储器单元电路利用量子点环状电路结构形式，由外接输入电压控制各岛上的电荷，能够得到存储器的“0”和“1”状态。

It is shown that the two states('0' and '1') of single-electron ring memory, which has a cyclic array of quantum dots, can be implemented by input voltage controlling the charges on the islands.

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与T 5, T 8, T12和环形光管的形状、结构、电子特性和控制电路相同。

Same shape, structural and electrical characteristics and control circuits as for regular T5, T8, T12 and Circline lamps.

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