研究表明，单电子环形存储器单元电路利用量子点环状电路结构形式，由外接输入电压控制各岛上的电荷，能够得到存储器的“0”和“1”状态。
It is shown that the two states('0' and '1') of single-electron ring memory, which has a cyclic array of quantum dots, can be implemented by input voltage controlling the charges on the islands.
本文从理论上对高道密度垂直磁记录环形头读出电压进行了计算，并对道间串扰进行了分析。
Readback voltage of perpendicular recording for high track density with ring-type head is theoretically calculated, and rcadback noise is analysed.
本文描述HL-1装置放电过程中，等离子体破裂及环形导体中感应电压和电流的精细测量。
The induced voltages and currents due to plasma disruptions in the surrounding conductors are presented.
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