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对深亚微米器件中热载流子效应(hce)进行了研究。
The hot carrier effects (HCE) in deep sub-micron devices has been studied.
通过对这些失效因素的研究并通过一定的再设计手段，可以减少热载流子效应导致的器件退化。
The device degradation induced by HCE can be reduced by studying these failure factors to resign the circuits.
随着MOS器件尺寸逐渐减小，由热载流子效应导致的损伤变得越来越严重，已成为影响器件性能的主要失效机制之一。
With the decrease of the MOS devices size, hot carrier effect failure get more and more heavy, it become one of the main failure mechanisms.
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