...例如:发光二极体、雷射二极体、短波长探测器、短波长光 波导及滤波器等,并且氧化锌具有较大的激子束缚能(exciton binding energy)约60 meV,而与其它宽能隙半导体材料相比(表1-1),氮化镓的25 meV、硫化锌的37 meV,从表中得知氧化锌的激子束缚能比其它半导体材料...
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Zinc oxide（ZnO）is an interesting wide band gap（3.3 eV at room temperature）Ⅱ-Ⅵsemiconductor material,which has a much larger exciton binding energy（60 mev）than GaN（～25 meV）and ZnSe（22 meV）.
ZnO是一种新型的Ⅱ-Ⅵ族宽禁带半导体材料,室温宽带隙约为3.3 eV,它的激子束缚能高达60 meV,远大于GaN的25 meV和ZnSe的22 meV。
参考来源 - ZnO薄膜的制备及其特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
然而，塑料太阳能电池向另一释放电子和空穴形成激子时束缚力很强。
However, in plastic solar cells the liberated electrons and holes bind strongly to one another, forming particle-like entities known as excitons.
我们的的这个结果意味着，这种激子的束缚能很弱，或者是形成单线态的几率可能要比形成三线态的几率高得多。
Our results imply that the exciton binding energy is weak, or that singlet bound states are formed with higher probability than triplets.
这说明该模型也适用于对量子环中激子的束缚能和PL谱等物理性质的研究。
It demonstrates that the FECPP model is also suitable to describe the physical property of binding energies and PL spectroscopy of excitons in quantum rings.
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