本文首先建立了一个SOI MOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
研究了镧掺杂对漏电特性的影响，以及肖特基势垒电流模型。
The effects of Lanthanum doping on leakage current characteristics were also studied by Shottky model.
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