漏电压增加了三倍。意即,是原来的四倍。
图4.7 在不同的温度下的源漏电压的关系曲线。
Fig4.7 The Id -dependence of Vds with different temperature.
而场板电场峰值则随着漏电压的增大不断增大,直至器件击穿。
However, the peak of field plate electronic field will increase with the drain voltage until device is breakdown.
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