针对漏极偏置对经时击穿的影响，对反熔丝结构做了优化，提高了编程速度和数据存储的可靠性。
With the consideration of the drain bias on the impact of TDDB, we have optimized the anti-fuse structure, which improve the programming speed and data storage reliability.
在一种可替代的电路中，每个负载器件(M3, M4)的衬底都与它的漏极相连，并且被偏置在弱反型区工作。
In an alternative circuit, each load device (M3, M4) has its bulk connected to its drain and is biased to operate in the weak inversion regime.
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