相应地，该晶体管的阈值电压及栅源极电压也可降低。
Accordingly, threshold voltage as well as voltage of grid and source pole of the transistor also can be lowered.
硬开关(图26所示)几乎不考虑漏源极电压的最小值。
The hard switching approach (as shown in Fig. 26) doesn't consider the minimum drain-source voltage.
图20描述了漏源极电压主要原理产生的电磁干扰频谱。
The spectra of the main elements of the drain-source voltage can be found in Fig. 20.
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