... reactive sputtering 反应溅射 cathode sputtering process 阴极溅射沉积法... sputtering rate 溅射率 ...
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...射原子吸附，则残余的反应气体将撞击靶面而在靶面发生反应形成 化合物，一旦靶材化合物形成后，则将造成溅射率(Sputtering yield)的降低。所以， 在低反应气体压力下有较高的沉积速率。
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The sputter yield of SiC enhances and reachs to the max value following the incidence angle of ion gradually increasing from 0 to about 70 degree.
随着离子入射角度的逐渐增加，SiC的溅射率逐渐增加，在70°左右达到溅射峰值。
参考来源 - 离子束轰击Si及SiC的计算机模拟The sputter yield of SiC enhances and reachs to the max value following the incidence angle of ion gradually increasing from 0 to about 70 degree.
随着离子入射角度的逐渐增加，SiC的溅射率逐渐增加，在70°左右达到溅射峰值。
参考来源 - 离子束轰击Si及SiC的计算机模拟·2,447,543篇论文数据，部分数据来源于NoteExpress
它具有工作气压高，维持电压低，阴极溅射率高等特点。
It has the characteristic of working on higher pressure and lower voltage and having a high cathode sputtering rate.
高z材料因其高熔点和低溅射率近年来受到越来越多的关注，但是难熔材料的脆性等问题仍然是这类材料应用的一大障碍。
More attentions are paid to high Z materials because of their high melting point and low sputter rate, but such materials remain the problems of brittleness to which is harmful for their application.
模拟结果表明，增加引出电压可以缩短引出时间，降低碰撞损失，但是增加了溅射损失，使得收集率降低；
The results show that the extraction time and collision loss are decreased by increasing extraction voltage, but the sputtering loss increases and collection ratio decreases.
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