[摘要] 一种闪存的制造方法,此方法在基底上依序形成穿遂介电层与导体层,之后图案化此导体层,以形成浮置栅极(floating gate),然后于此浮置栅极两侧的基底中形成源极/漏极区。
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浮置栅极接触分隔件,并具有从下部向上部逐渐增加的宽度。
The floating grid contacts with the separator with crescent width from the bottom to the top.
在读取操作期间,该读取晶体管被激活以产生指示储存在该浮置栅极节点中的电荷的输出信号。
During a read operation, the read transistor is activated to produce an output signal indicative of the charge stored in the floating gate node.
半导体装置包括从基底突出的隔离层、分隔件、隧道绝缘层、浮置栅极、介电层图案和控制栅极。
The semiconductor device includes a isolated layer protruding from a substrate, a separator, a tunnel insulation layer, a floating grid, a dielectric layer pattern and a control grid.
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