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采用平面选择注入隔离工艺制作MESFET及旁栅电极，通过改变半导体特性测试仪的延迟时间参数，深入研究了不同沟道电流的数据采集时间对旁栅效应迟滞现象的影响。
The influence of different data collection time of channel current on the side gating hysteresis effect is studied by changing the delay time of semiconductor characteristic testing set.
在数据处理中，考虑了部份沟道电阻贡献与栅电流有关。
In the data processing, it is considered that the contribution of the partial channel resistance is related to the gate cur-rent.
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