... channel resistance 沟道电阻 channel temperature 沟道温度 channel transistor 沟道晶体管 ...
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推导了了一个短沟道MOST阈值电压温度系数表达式；
We deduced a expressions for threshold voltage temperature coefficient of short channel MOST.
在考虑了各种散射效应对迁移率的影响后，提出了短沟道MOST表面载流子迁移率的温度模型。
We represent a temperature model of surface carrier mobility of short channel MOST after thinking about kinds of dispersion effect.
该物理模型考虑了高压dmos器件的准饱和特性、沟道非均匀掺杂特性和温度效应。
The unique features of DMOS such as quasi-saturation, non-uniformly doped channel, and temperature dependencies are accurately modeled.
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