在左和右扩散区之间形成沟道区。
A channel region is formed between the left and right diffusions regions.
本发明降低了导电插塞的电阻，并且降低了扩散的离子进入MOS单元的沟道区域的可能性。
By using the invention, the resistance of the conductive plug can be reduced and the possibility of entering a channel area of the MOS unit by diffused ions can be reduced.
分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。
For double channel implantations with different depths, different contributions of the implanted impurities during oxide diffusion to the surface concentrations are studied in the paper.
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