... silicon on dielectric 绝缘体上硅结构 silicon nitride substrate 氮化硅层衬底 silicon nitride passivation 氮化硅钝化 ...
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氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
本发明公开了一种刻蚀停止层，包括在衬底上形成的含氮的碳化硅 层，以及位于所述碳化硅层之上的氮化硅层。
The invention discloses an etching stopping layer comprising a nitrogenous silicon carbide layer formed on a substrate and a silicon nitride layer formed on the silicon carbide layer.
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