我们同时对反应离子刻蚀工艺中的等离子体充电效应和离子轰击对氧化硅造成的损伤进行了讨论。
At the same time, the influence of plasma charging and ion bombardment on the quality of silicon oxide are analyzed.
用硅光刻工艺和二氧化硅湿法腐蚀工艺制作了针状封装结构的光纤消逝场传感器。
Evanescent wave fiber-optic sensors (EWFS) with acicular encapsulation were fabricated using silicon photolithography technology and silica wet-etching technology.
对提纯石棉尾矿酸浸渣制备无定型二氧化硅的最优工艺条件进行研究。
The optimal technical condition of the preparation of amorphous silica by purifying acid leaching residues of asbestos tailings was reported.
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