ARNO annealed reoxidized nitroxide 已退火再氧化氮氧化物 OPS oxidized porous silicon 氧化多孔硅 amorphous-silicon thin-film transistors 非晶硅薄膜晶体管 ..
基于52个网页-相关网页
·2,447,543篇论文数据，部分数据来源于NoteExpress
我们认为很可能是多孔硅内表面的氧化作用使光致发光峰位蓝移，由氧化作用产生的非辐射复合中心导致光致发光效率的下降。
The blue shift of the PL peak is a result of oxidation of inner surfaces of PS and the decrease of PL efficiency is attributed to the produce of nonradiative recombination centers during oxidation.
对多孔硅进行氧化、硅烷化、戊二醛交联剂和抗体共价结合处理，制备出生物免疫传感器。
The structure of immunosensor is prepared by the following steps: oxidization, silanization, glutaraldehyde cross-linker, and covalent binding of antibody.
并在其表面沉积了氧化钒热敏薄膜，研究了多孔硅样品的热绝缘性能对氧化钒热敏薄膜阻温特性的影响。
The influence of the thermal isolation of the PS on resistance's sensitivity of VOx film was investigated.
应用推荐