...铅环保最小包装：3000PCSN沟道增强型功率MOSFET漏极-源极电压（VDS）:20V漏极电流（ID）:3.8A漏源电流脉冲IDM:15A栅源电压（VGS）:±10V结温（TJ）:150℃储存温度（TSTG）:-55~150℃耗散功率（PD）:1.25W栅源极开启电压VGS(th):0.55~1.0V栅源截至电流IGSS(F/R):...
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其中，VDS 为漏源电压（drain-to-source voltage），VGS 为栅源电压（gate-to-source voltage）。将这些式子结合起来，可得到MOSFET栅极驱动电压是漏源电压的函数：
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轻型高压直流输电是在电压源换流器和绝缘栅双极晶体管基础上开发出来的一种新型输电技术。
The light HVDC transmission is a new power transmission technology based on the voltage source converters(VSCs) and IGBT power semiconductors.
该带隙电压基准源电路中的深度负反馈运算放大器为低失调、高增益的折叠型共源共栅运算放大器。
A deep negative feedback operation amplifier used in band gap reference is a common source and gate folded cascade operation amplifier with a lower offset voltage and a higher gain.
相应地，该晶体管的阈值电压及栅源极电压也可降低。
Accordingly, threshold voltage as well as voltage of grid and source pole of the transistor also can be lowered.
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