栅隧穿电流分量研究_电子行业学术文章_质量学术文章_电子质量E周刊 关键词： MOS器件；栅氧化层；隧穿 [gap=480]Key words: MOS devices;gate oxide;tunneling
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较佳地，该多层阶梯结构各阶梯表面的栅氧化层厚度不相同。
It will be better that grid oxide layers on each surface of staircase in MSS possess different thickness.
针对栅氧化层击穿otp存储单元提出了可行的阵列结构和电流敏感放大器。
For gate oxide breakdown OTP memory, we present a viable NOR array structure and current sense amplifiers.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
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