杂质能级是指半导体材料中的杂质使严格的周期性势场受到破坏，从而有可能产生能量在带隙中的局域化电子态,称为杂质能级。
... 禁带宽度(能隙)band gap (energy gap) 杂质能级impurity energy level 激发excitation ...
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... Deep impurity level 深度杂质能级 impurity level,impurity level, 杂质能级 impurity [energy] level 杂质能级 ...
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原子序数越大，杂质能级越深。
The bigger the atomic number, the deeper the impurity level is.
变温实验说明相应发射峰与材料禁带中形成的杂质能级有关。
It is believed that the emission peaks were concerned with impurity level in the bandgap.
最后定性地说明了过渡元素杂质能级的化学趋势和一些实验事实。
Finally, the chemical trend and some experimental facts of transition impurity energy levels are qualitatively explained.
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