... 杂质导电区 extrinsic range 杂质分布 impurity distribution 杂质激活 impurity activation ...
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... 稳定性方法的研究（Stability indicating method development） 杂质分布（Impurity profile generation） 降解产物鉴定（Degradation product identification） ...
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本文论述了海绵钛产品的杂质分布及对产品质量的影响。
The paper dissertated the impurity distribution of titanium sponge and its affect on product quality.
分析了反型层的杂质分布、最大沟道电势与注入剂量、氧化层厚度和栅压等之间的关系。
The relations of impurity profile in the inversion layer and the maximum channel potential versus dose, width of SiO_2 and gate bias are analysed.
结果表明，与硅烷常压外延和四氯化硅常压外延相比，硅烷低压外延的杂质分布更为陡峭。
The results have shown that the doping profile of the low pressure epitaxy of silane is steeper than those of silane epitaxy and silicon tetrachloride epitaxy at atmosphere pressure.
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