... 本征半导体 I-type semiconductor 本征层 intrinsic layer 本征电荷 intrinsic charge ...
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禁带宽度越大，本征层最佳厚度也越大。
The wider the band gap, the thicker the optimal intrinsic thickness was.
将硅本征氧化层与硅热氧化层两种键合界面在退火过程中的行为进行了理论分析与比较。
Wafer pairs with bonding interface being native oxide or thermal oxide have different bonding behavior in the annealing process, which were investigated and compared.
其中每一个平稳数据层被称为一个本征模式函数，它们代表了信号不同尺度的特性。
Each of smooth layers is called as intrinsic mode function, which represents the signal characteristics of different scales.
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