当基极接地时，晶体管Q4便成为一个非常高的阻抗。
With the base grounded, transistor Q4 is a very high impedance.
用XRD、循环伏安、电化学阻抗谱(EIS)、恒流充放电测试研究了材料的晶体结构和电化学性能。
The crystal structure and electrochemical performance of the material were studied by XRD, cyclic voltammetry, electrochemical impedance spectroscopy (EIS) and galvanostatic charge-discharge tests.
与通常晶体管相比，FFJ的有效发射极面积对基极面积之比值提高2～3倍，输出功率-阻抗乘积提高5～10倍。
The ratio of effectual emitter area to base area of a FFJ is 2-3 times greater than a usual transistor and the output power-impedance product is 5-10 times greater.
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