根据扫描所得的电容-时间瞬态曲线，可确定样品中少于产生寿命。
From the Ct transient curve obtained experimentally, the minority carrier generation lifetime in semiconductor can be determined.
应该等待足够的时间，使开关瞬态信号衰减，电流达到稳定，然后再进行测量。
The current should be measured after a sufficient settling time to allow the switching transients to decay and the current to stabilize.
更改'时间依赖'从稳态瞬态。
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