铁电阵列在红外探测器、非挥发性存储器中具有重要应用。
Ferroelectric arrays have promising applications in the infrared detectors and non-volatile ferroelectric memories.
在铁电不挥发存储器(FERAM)技术中，集成铁电电容的制备是关键工艺之一。
For fabricating the nonvolatile ferroelectric memories (FERAM), one of the keys is to make the integrated ferroelectric capacitors.
根据以前工作推导出的计算真空熔融合金中微量元素挥发速率的公式，对铁基合金制作了数表。
On the basis of former formula for calculating vaporization rate constant a digital table was made for iron based alloys.
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