Besides, two novel kinds of fast and soft recovery SiGeC/Si heterojunction power diodes, the ideal ohmic contact diodes and the ideal ohmic contact diodes with three layers gradual changing doping concentration in n- region, are proposed in this paper.
另外,本文还提出了两种快速软恢复SiGeC/Si异质结二极管新结构:理想欧姆接触型和n-区渐变掺杂理想欧姆接触型。
参考来源 - SiGeC/Si功率二极管新结构的研究与特性分析·2,447,543篇论文数据,部分数据来源于NoteExpress
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