摘要： 采用在等离子体增强化学气相沉积(PFCVD)系统中沉积a-Si：H和原位等离子体逐层氧化的方法制备a-Si：H／SO2多层膜．用快速热退火对a-Si：H／SiO2多层膜进行处理，制备nc—...
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等离子增强化学气相沉积(PECVD)是低温沉积硅膜的主要方法。
Plasma enhanced chemical vapor deposition (PECVD) is one of the matured and simple manipulated among the thin film deposition methods at low temperature.
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
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