旁瓣电平又有第一旁瓣电平、 近主旁瓣电平（near-in sidelobe level）、 峰值旁瓣电平（peak sidelobe level） 和平均旁瓣电平等， 这些概念都可以从字面意义上进行理解。 阵元位置优化问题中主要关心的是峰值旁瓣电平。
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论述了均值旁瓣电平和峰值旁瓣电平的基本原理。
In this paper, the basic principle about the mean sidelobe level and the peak sidelobe level are described.
通过理论分析和数值模拟，计算了峰值旁瓣电平的概率密度分布，并给出了抑制旁瓣电平恶化的一些措施。
The probability density distribution of peak sidelobe levels is studied by theoretical analysis and numerical simulation, and several approaches of suppression of sidelobe level degradation are given.
在约束阵列孔径和阵元数的条件下，高效地实现了任意最小阵元间距约束下抑制峰值旁瓣电平(PSLL)的稀布阵综合。
Under the optimization constraints of the number of element, the aperture and the minimum element spacing, the MGA has been utilized to reduce the peak sidelobe level (PSLL) of the array.
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