由于尺寸小，重量轻，晶体管优于真空管。
Being small and light makes transistors more advantageous to vacuum tubes.
分析了功率VDMOS晶体管在小尺寸时准饱和效应的成因，并对其进行了理论证明和模拟验证。
In small size power VDMOS transistors, the cause of quasi-saturation effect has been investigated and simulated by software.
最新的晶体管尺寸非常小，在其通道中掺杂只要往硅中注入少量杂质原子，如果这个量掌握得不好，晶体管的正常运行就会受到影响。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon. Get the number wrong, and things will not work properly.
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