实验结果表明：量子点的横向耦合控制了量子点器件在小偏压下的电输运特性。

Our results show that the lateral coupling between the quantum dots mainly determine the transport properties of the quantum dot devices under small biases.

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结果表明，相对理想情形，特性曲线的反向偏压区漏电因深能级隧穿偏大；正向小偏压下因沿着位错汇聚金属产生漏电流；

It is found that in the backward voltage segment of the I-V curve the leakage current is larger because of deep-level-assistant tunneling;

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