所述两个或更多个导电层被夹在所述两个外围绝缘层之间，且它们通过所述中间绝缘层而彼此间隔开以形成两个或更多个量子阱。
The two or more conducting layers are sandwiched between the two peripheral insulating layers, and they are spaced apart by the intermediate insulating layers to form two or more quantum Wells.
所述导电接触件中的每一个都与所述导电层中的一个直接且选择性连接，使得单独的量子阱可以通过所述导电接触件而被选择性访问。
Each of the conductive contacts is directly and selectively connected with one of the conducting layers, so the individual quantum Wells can be selectively accessed through the conductive contacts.
形成在所述半导体衬底中的与所述第一导电类型相反的第二导电类型的阱区；
The semiconductor device includes a semiconductor substrate of a first conductivity type; a well region of a second conductivity type, formed in the semiconductor substrate;
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