采用直流磁控溅射法在清洁玻璃基片上制备了掺钨氧化铟（IWO）透明导电氧化物薄膜。
Transparent conductive, tungsten-doped indium oxide(IWO) films with the high carrier molbility were grown by magnetron sputtering on glass substrates, followed by in-situ annealing.
柔性透明导电氧化物薄膜以其重量轻、不易碎、成本低等独特的优点而备受青睐，在塑料液晶显示、可折叠太阳能电池等领域得到广泛的应用。
Flexible transparent conductive oxide films have become a focus of research because of some unique advantages, such as light weight, flexibility, cost effective, etc.
本发明方法获得的P型导电透明氧化物薄膜在透明电子学和新型光电器件领域具有较好的应用前景。
The P-type conductive transparent oxide film obtained by the method of the invention has better application prospect in the fields of transparent electronics and novel photoelectric devices.
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