提出了一种基于实测伏安特性确定多晶硅电阻中晶粒数及晶粒平均长度的方法。
A method for determining the number of grain and the average length of grain in polysilicon resistor is given.
计算结果表明，计入沟道长度调制效应后的直流模型在饱和区与实测的I-V特性较为吻合。
Simulation results show that the model with channel-length modulation effects included agrees with the measured I-V characteristics in the saturation region.
由于岩石破碎过程非常复杂的，采用当前的动态断裂理论得出的裂纹扩展长度与实测值差异较大。
Because the process of rock broken is very complicated, there is a difference between the experimental data and theoretical result of expanding fissure by the present dynamic fracture theory.
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