采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
直接施加于试样的脉冲负偏压对等离子体特性没有明显影响，但存在着一定的溅射作用。
The influence of negative pulse voltage applied directly to stainless steel samples on plasma characteristics has been found to be negligible, except sample sputtering.
结果表明，不同外加偏压下，高能态电子透射率谱在一定范围内有显著的变化。
It is shown that for the same system, under different bias voltages, the spectra of the electron transmissivity change obviously within a certain energy range.
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