碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。

Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).

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该化合物可以用于电子器件，如有机薄膜晶体管(OTFT)，显示器件，发光二极管，光伏电池，光检测器和存储单元。

The compounds can be used in electronic devices such as organic thin film transistors (OTFTs), display devices, light-emitting diodes, photovoltaic cells, photo-detectors, and memory cells.

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在编程此反熔丝一次可编程非易失存储器单元后，已编程的区域(例如为连结)可作为二极管，其形成于反熔丝上。

A programmed region, i. e., a link, functioning as a diode, is formed on the anti-fuse after the anti-fuse OTP nonvolatile memory cell is programmed.

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