本文显示立体型多栅结构可有效提升低功耗逻辑用III-V族QWFET管子的尺寸缩微能力。
The results of this work show that non-planar, multi-gate device architecture is an effective way to improve the scalability of III-V QWFETs for low power logic applications,’’ according to the firm.
论述了多栅开关的结构和特点。
The structure and characteristic of multi-gate switch are described.
本发明同时公开了一种多介质复合遂穿层的纳米晶浮栅存储器的制作方 法。
The invention also discloses a fabricating method for the nanocrystal floating gate memory with the multi-media composite tunneling layer.
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