... polysilicon 多晶硅 polysilicon backfill 多晶硅填充 polysilicon boat 多晶硅小舟 ...
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... polysilicon fet 多晶硅场效应晶体管 polysilicon filling 多晶硅填充 polysilicon gate ccd 多晶硅栅电荷耦合掐 ...
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型隔离槽的多晶硅填充 v groove isolation polycrystal backfill ; vip
所述氧化层的部分被移除，以使所述沟槽填充的氧化层作为第一多晶硅层基本平面化。
Portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.
然后，在衬底上形成第一多晶硅层，以便第一多晶硅层填充开口。
Then, a first polysilicon layer is formed over the substrates such that the first polysilicon layer fills the opening.
在衬底上形成第二多晶硅层，以便第二多晶硅层填充凹部。
A second polysilicon layer is formed over the substrate such that the second polysilicon layer fills the recess.
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