笔者认为，马丁·雅克的论述既有其内在的缺陷，也有广泛的外延。
In my view there is both less to Martin Jacques's thesis and more.
与此同时，在新的理论认识与技术条件下，硅材料改性，杂质发光，缺陷工程和硅基异质外延也呈现出新的发展趋势。
With deepened research of porous Si and the advancing nanometer science, a path towards nanometer light-emitting materials is being opened up.
如果样品中由于其他因素造成超晶格层起伏较大，那么超晶格层不仅起不到过滤缺陷的作用还会成为新的缺陷源，降低外延层质量。
The superlattice structure will become new dislocation source and decrease crystalline quality if the superlattice structure is not flat, which is caused by other factors.
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