通过使用HVPE的外延横向过生长实现连续的化合物半导体厚膜(15)或晶片的进一步的生长。
Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.
X射线衍射，扫描电子显微镜，X射线光电子能借测量表明生长的BNN膜是外延单晶膜。
The measurements of XRD, SEM and XPS show that the as - grown BNN film is epitaxial single crystal with smooth surface.
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