快恢复外延二极管 fast revcovery epitaxial diodes ; Fast Recovery Epitaxial DiodesFRED
异质外延二极管 hetero epitaxial diode
平面型外延二极管 planar epitaxial diode
快速恢复外延二极管 fast-recovery epitaxial diode ; recovery epitaxial diode
金-外延硅高频二极管 gold-epitaxial silicon high-frequency diode
外延硅变容二极管 epitaxial silicon variable capacitance diode ; ESVCD
外延型二极管 epitaxial type diode
外延生长二极管 epitaxial grown diode
硅外延平面二极管 Silicon Epitaxial Planar Diode
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
国内外制备PIN二极管主要采用离子注入方法，扩散方法，外延方法。
A few methods are introduced at home and abroad on producing PIN diodes: diffusion, ion implantation, and epitaxial.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
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